PART |
Description |
Maker |
IRFB4019 IRFB4019PBF |
Key Parameters Optimized for Class-D Audio Key Parameters Optimized for Class-D Audio Amplifier Applications
|
Kersemi Electronic Co., Ltd... Kersemi Electronic Co.,...
|
IRFB4020PBF-15 |
Key parameters optimized for Class-D audio amplifier applications Key parameters optimized for Class-D audio amplifier applications
|
International Rectifier
|
IRFB5615PBF |
DIGITAL AUDIO MOSFET Key Parameters Optimized for Class-D Audio Amplifier Applications
|
International Rectifier
|
87636-2102 |
1.27mm (.050) Pitch DDR DIMM Socket, Vertical, Black Latch, Single Key, with Beveled Metal Pins, 2.5V Left Voltage Key, 3.23mm (.127) Tail Length
|
Molex Electronics Ltd.
|
87636-2002 |
1.27mm (.050) Pitch DDR DIMM Socket, Vertical, Beige Latch, Single Key, with Beveled Metal Pins, 2.5V Left Voltage Key, 3.23mm (.127) Tail Length
|
Molex Electronics Ltd.
|
SI4362BDY-RC |
R-C Thermal Model Parameters
|
Vaishali Semiconductor Vishay Siliconix
|
SI3865BDVRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
RLDH980-70-3 |
main technical parameters
|
Roithner LaserTechnik G...
|
SI4684DY-RC |
R-C Thermal Model Parameters
|
Vaishali Semiconductor
|
VCO-111TC |
Nominal Operating Parameters
|
RF Micro Devices
|
SI4483EDY_RC |
R-C Thermal Model Parameters
|
VISAY[Vishay Siliconix]
|
SI7401DN-RC |
R-C Thermal Model Parameters
|
VISAY[Vishay Siliconix]
|